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| APTML60U12R020T1AG Linear MOSFET Power Module VDSS = 600V RDSon = 125m typ @ Tj = 25C ID = 45A* @ Tc = 25C Application * Electronic load dedicated to power supplies and battery discharge testing Features * * * * * Linear MOSFET Very low stray inductance Internal thermistor for temperature monitoring High level of integration AlN substrate for improved thermal performance Benefits * * * * * * Pins 1/2 ; 5/6 must be shorted together Direct mounting to heatsink (isolated package) easy series and parallels combinations for power and voltage improvements Low junction to case thermal resistance Solderable terminals both for power and signal for easy PCB mounting Low profile RoHS Compliant Absolute maximum ratings Symbol VDSS ID IDM VGS RDSon PD IAR EAR EAS Parameter Drain - Source Breakdown Voltage Continuous Drain Current Pulsed Drain current Gate - Source Voltage Drain - Source ON Resistance Maximum Power Dissipation Avalanche current (repetitive and non repetitive) Repetitive Avalanche Energy Single Pulse Avalanche Energy Tc = 25C Tc = 80C Max ratings 600 45* 33* 172 30 130 568 45 50 3000 Unit V A V m W A mJ Tc = 25C * Output current must be limited to 31A @ TC=25C and 22A @ TC=80C to not exceed the shunt specification. In saturation mode These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note APT0502 on www.microsemi.com www.microsemi.com 1-3 APTML60U12R020T1AG - Rev 0 October, 2009 APTML60U12R020T1AG All ratings @ Tj = 25C unless otherwise specified Electrical Characteristics Symbol Characteristic IDSS RDS(on) VGS(th) IGSS Zero Gate Voltage Drain Current Drain - Source on Resistance Gate Threshold Voltage Gate - Source Leakage Current Test Conditions VDS = 600V ; VGS = 0V VDS = 480V ; VGS = 0V Tj = 25C Tj = 125C Min Typ VGS = 10V, ID = 22.5A VGS = VDS, ID = 2.5mA VGS = 30 V 125 2 Max 25 250 130 4 100 Unit A m V nA Dynamic Characteristics Symbol Ciss Coss Crss Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Test Conditions VGS = 0V VDS = 25V f = 1MHz Min Typ 7600 1280 620 Max Unit pF Shunt Electrical Characteristics Symbol Characteristic Resistance value Rsh Tsh Tolerance Psh Ish Load capacity Current capacity TC=25C TC=80C TC=25C TC=80C Min Typ 20 2 Max Unit m % W A 20 10 31 22 Temperature sensor PTC Symbol R25 R100/R25 R-55/R25 B Characteristic Resistance @ 25C Resistance ratio Resistance ratio Temperature coefficient Tamb=100C & 25C Tamb=-55C & 25C Min 1980 1.676 0.48 Typ 1.696 0.49 7900 Max 2020 1.716 0.50 Unit ppm/K Thermal and package characteristics Symbol RthJC VISOL TJ TSTG TC Torque Wt Characteristic Junction to Case Thermal Resistance Operating junction temperature range Storage Temperature Range Operating Case Temperature Mounting torque Package Weight Min MOSFET 4000 -40 -40 -40 2.5 Typ Max 0.22 150 125 100 4.7 80 RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz Unit C/W V C N.m g October, 2009 2-3 APTML60U12R020T1AG - Rev 0 To heatsink M4 www.microsemi.com APTML60U12R020T1AG SP1 Package outline (dimensions in mm) See application note 1904 - Mounting Instructions for SP1 Power Modules on www.microsemi.com Typical Performance Curve (linear mode) Drain Current vs Drain source voltage 100.0 TJ=125C Power vs Drain source voltage 400 TJ=125C Dissipated Power (W) Drain Current (A) 350 10.0 300 1.0 250 0 100 200 300 400 500 0 100 200 300 400 500 Drain Source Voltage (V) Drain Source Voltage (V) Microsemi reserves the right to change, without notice, the specifications and information contained herein Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 6,939,743 7,352,045 5,283,201 5,801,417 5,648,283 7,196,634 6,664,594 7,157,886 6,939,743 7,342,262 and foreign patents. U.S and Foreign patents pending. All Rights Reserved. www.microsemi.com 3-3 APTML60U12R020T1AG - Rev 0 October, 2009 0.1 200 |
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